Comparative Analysis of Process Parameter Variations in DGFinFET Device Using Statistical Methods

• المؤلفون الرئيسيون: Roslan A.F., Salehuddin F., M Zain A.S., Mansor N., Kaharudin K.E., Ahmad I., Hazura H., Hanim A.R., Idris S.K., Zaiton A.M., Zarina B.Z., Mohamad N.R., A Hamid A.M.
• مؤلفون آخرون: 57203514087
• التنسيق: Conference Paper
• منشور في: Institute of Physics Publishing 2023

FinFET; Leakage currents; Polycrystalline materials; Polysilicon; Semiconductor doping; Taguchi methods; Threshold voltage; Comparative analysis; Design and optimization; Electrical characterization; International Technology Roadmap for Semiconductors; Optimization approach; Process parameter variat...