Comparative Analysis of Process Parameter Variations in DGFinFET Device Using Statistical Methods

• Main Authors: Roslan A.F., Salehuddin F., M Zain A.S., Mansor N., Kaharudin K.E., Ahmad I., Hazura H., Hanim A.R., Idris S.K., Zaiton A.M., Zarina B.Z., Mohamad N.R., A Hamid A.M.
• 其他作者: 57203514087
• 格式: Conference Paper
• 出版: Institute of Physics Publishing 2023

FinFET; Leakage currents; Polycrystalline materials; Polysilicon; Semiconductor doping; Taguchi methods; Threshold voltage; Comparative analysis; Design and optimization; Electrical characterization; International Technology Roadmap for Semiconductors; Optimization approach; Process parameter variations; Subthreshold voltages; Threshold voltages (Vth); Statistical methods