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Comparative Analysis of Process Parameter Variations in DGFinFET Device Using Statistical Methods

FinFET; Leakage currents; Polycrystalline materials; Polysilicon; Semiconductor doping; Taguchi methods; Threshold voltage; Comparative analysis; Design and optimization; Electrical characterization; International Technology Roadmap for Semiconductors; Optimization approach; Process parameter variat...

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Bibliographic Details
Main Authors: Roslan A.F., Salehuddin F., M Zain A.S., Mansor N., Kaharudin K.E., Ahmad I., Hazura H., Hanim A.R., Idris S.K., Zaiton A.M., Zarina B.Z., Mohamad N.R., A Hamid A.M.
Other Authors: 57203514087
Format: Conference Paper
Published: Institute of Physics Publishing 2023
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Summary:FinFET; Leakage currents; Polycrystalline materials; Polysilicon; Semiconductor doping; Taguchi methods; Threshold voltage; Comparative analysis; Design and optimization; Electrical characterization; International Technology Roadmap for Semiconductors; Optimization approach; Process parameter variations; Subthreshold voltages; Threshold voltages (Vth); Statistical methods

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