Investigation of plasma induced etch damage/changes in AlGaN/GaN HEMTs
Link to publisher's homepage at http://ijneam.unimap.edu.my
Saved in:
Main Authors: | A., Ofiare, S., Taking, K., Karami, A., Dhongde, A., Al-Khalidi, E., Wasige |
---|---|
Format: | Article |
Language: | English |
Published: |
Universiti Malaysia Perlis (UniMAP)
2022
|
Subjects: | |
Online Access: | http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75096 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs
by: A., Dhongde, et al.
Published: (2022) -
Numerical Simulation and Comparative Assessment of DG-HEMT Device for High-frequency Application
by: Abdelmalik Belarbi, et al.
Published: (2019) -
Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor
by: K, Karami, et al.
Published: (2022) -
Effect of device parameters on transmission coefficient of Al₀.₃Ga₀.₈N/GaN Resonant Tunneling Diode grown on silicon substrate
by: Chowdhury, Subhra, et al.
Published: (2016) -
Optical properties of GaN nanostructures for optoelectronic applications
by: Yarub, Al-Douri, Assoc. Prof. Dr.
Published: (2014)