Holdings: Investigation of plasma induced etch damage/changes in AlGaN/GaN HEMTs

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Bibliographic Details
Main Authors:	A., Ofiare, S., Taking, K., Karami, A., Dhongde, A., Al-Khalidi, E., Wasige
Format:	Article
Language:	English
Published:	Universiti Malaysia Perlis (UniMAP) 2022
Subjects:	AlGaN/GaN High electron mobility transistors (HEMTs) Plasma induced damage Post-gate annealing
Online Access:	http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75096
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