DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications

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Main Authors:	Murugapandiyan, P., Ravimaran, S., William, J.
其他作者:	murugavlsi@gmail.com
格式:	Article
语言:	English
出版:	Universiti Malaysia Perlis (UniMAP) 2017
主题:	HEMT Back-barrier Recessed gate Cut-off frequency Regrown ohmic contact Short channel effects
在线阅读:	http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49953
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