Murugapandiyan, P., & murugavlsi@gmail.com. (2017). DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications. Universiti Malaysia Perlis (UniMAP).
Chicago Style CitationMurugapandiyan, P., and murugavlsi@gmail.com. DC and Microwave Characteristics of AlN Spacer Based Al₀.₃₇Ga₀.₆₃N/GaN HEMT On SiC Substrates for High Power RF Applications. Universiti Malaysia Perlis (UniMAP), 2017.
MLA CitationMurugapandiyan, P., and murugavlsi@gmail.com. DC and Microwave Characteristics of AlN Spacer Based Al₀.₃₇Ga₀.₆₃N/GaN HEMT On SiC Substrates for High Power RF Applications. Universiti Malaysia Perlis (UniMAP), 2017.
Warning: These citations may not always be 100% accurate.