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DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications

Link to publisher's homepage at http://ijneam.unimap.edu.my/

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Bibliographic Details
Main Authors: Murugapandiyan, P., Ravimaran, S., William, J.
Other Authors: murugavlsi@gmail.com
Format: Article
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2017
Subjects:
HEMT
Back-barrier
Recessed gate
Cut-off frequency
Regrown ohmic contact
Short channel effects
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49953
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spelling my.unimap-499532017-11-21T01:26:20Z DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications Murugapandiyan, P. Ravimaran, S. William, J. murugavlsi@gmail.com HEMT Back-barrier Recessed gate Cut-off frequency Regrown ohmic contact Short channel effects Link to publisher's homepage at http://ijneam.unimap.edu.my/ The DC and RF performance of 30nm gate length enhancement mode (E-mode)AlGaN/AlN/GaN High electron mobility transistor (HEMT) on SiC substrate with heavily doped source and drain region have investigated using Synopsys TCAD tool drift diffusion model at room temperature. The proposed device features are recessed T - gate structure, InGaN back barrier and Si₃N4 passivated device surface. The HEMT exhibits a maximum drain current density of 2.1 [A/mm], transconductance gm of 1680 [mS/mm], current gain cut-off frequency frequency ft of 220 GHz and power gain cut-off frequency fmax of 245 GHz. At room temperature the measured carrier mobility (µ), sheet charge carrier density (ns) and breakdown voltage are 1400 (sm²/V - s), 1.6 X10¹³(Cm‾²) and 14V respectively. The excellent DC and microwave performance of the proposed HEMT is promising candidate for future high power RF applications. 2017-10-12T06:32:04Z 2017-10-12T06:32:04Z 2017 Article International Journal of Nanoelectronics and Materials, vol.10 (2), 2017, pages 111-122 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49953 en Universiti Malaysia Perlis (UniMAP)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic HEMT
Back-barrier
Recessed gate
Cut-off frequency
Regrown ohmic contact
Short channel effects
spellingShingle HEMT
Back-barrier
Recessed gate
Cut-off frequency
Regrown ohmic contact
Short channel effects
Murugapandiyan, P.
Ravimaran, S.
William, J.
DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications
description Link to publisher's homepage at http://ijneam.unimap.edu.my/
author2 murugavlsi@gmail.com
author_facet murugavlsi@gmail.com
Murugapandiyan, P.
Ravimaran, S.
William, J.
format Article
author Murugapandiyan, P.
Ravimaran, S.
William, J.
author_sort Murugapandiyan, P.
title DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications
title_short DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications
title_full DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications
title_fullStr DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications
title_full_unstemmed DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications
title_sort dc and microwave characteristics of aln spacer based al₀.₃₇ga₀.₆₃n/gan hemt on sic substrates for high power rf applications
publisher Universiti Malaysia Perlis (UniMAP)
publishDate 2017
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49953
_version_ 1643802829710688256
score 13.222552

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