DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Universiti Malaysia Perlis (UniMAP)
2017
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| Subjects: | |
| Online Access: | http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49953 |
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