DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications

Link to publisher's homepage at http://ijneam.unimap.edu.my/

Saved in:

書目詳細資料
Main Authors:	Murugapandiyan, P., Ravimaran, S., William, J.
其他作者:	murugavlsi@gmail.com
格式:	Article
語言:	English
出版:	Universiti Malaysia Perlis (UniMAP) 2017
主題:	HEMT Back-barrier Recessed gate Cut-off frequency Regrown ohmic contact Short channel effects
在線閱讀:	http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49953
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

相似書籍

DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications
由: Murugapandiyan, P., et al.
出版: (2017)

The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs
由: A., Dhongde, et al.
出版: (2022)

Investigation of plasma induced etch damage/changes in AlGaN/GaN HEMTs
由: A., Ofiare, et al.
出版: (2022)

Ohmic contacts optimisation for High-Power InGaAs/AlAs double-barrier resonant tunnelling diodes based on a dual-exposure e-beam lithography approach
由: Cimbri, Davide, et al.
出版: (2022)

Fabrication of Pt-circular schottky diode on undoped AlGaN/GaN HEMT
由: Mohamad, M., et al.
出版: (2010)

Gateless-FET pH sensor fabricated on undoped AlGaN/GaN HEMT structure HEMT structure
由: Maneea Eizadi Sharifabad,, et al.
出版: (2011)

Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN
由: Kamarudzaman, Anas, et al.
出版: (2020)

The sensing performance of undoped-AlGaN/GaN/sapphire HEMT hydrogen gas sensor
由: Mohamad, Mazuina, et al.
出版: (2008)

Open-gate liquid-phase sensor fabricated on undoped-AlGaN/GaN HEMT structure
由: Abidin, M. S. Z., et al.
出版: (2010)

The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT (a)
由: Mohamad, Mazuina, et al.
出版: (2010)

Gateless-FET pH sensor fabricated on undoped AlGaN/GaN HEMT structure
由: Sharifabad, Maneea Eizadi, et al.
出版: (2011)

Optimization of AlN/GaN strained-layer superlattice for GaN epitaxy on Si(111) substrate / Yusnizam Yusuf
由: Yusnizam, Yusuf
出版: (2017)

Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN
由: Kamarundzaman, Anas, et al.
出版: (2021)

Luminescence and crystalline properties of InGaN-based LED on Si substrate with AlN/GaN superlattice structure
由: Alias, Ezzah Azimah, et al.
出版: (2021)

Impact of sandwiched strain periodic multilayer AlN GaN on strain and crystalline quality of a-plane GaN
由: Omar Ayad Fadhil Al-Zuhairi
出版: (2021)

Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor
由: K, Karami, et al.
出版: (2022)

GateLESS-FET pH sensor fabricated on undoped-AlGaN/GaN HEMT structure
由: Zainal Abidin, Mastura Shafinaz, et al.
出版: (2010)

Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions
由: Othman, Nurul Aida Farhana, et al.
出版: (2019)

Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN (SCOPUS)
由: Anas Kamarundzaman
出版: (2021)

Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (1 1 1) substrate by MBE
由: M.Z. Mohd Yusoff, et al.
出版: (2014)

FP-LAPW calculations of ground state properties for AlN, GaN and InN compounds
由: Daoudi, B., et al.
出版: (2008)

Author Correction: Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN (SCOPUS)
由: Anas Kamarundzaman
出版: (2021)

Broadband GaN HEMT distributed power amplifier design with phase adjustment
由: Yan, Huan Hui, et al.
出版: (2017)

First-principles study of structural, electronic and optical properties of AlN, GaN, InN and BN compounds
由: Al-Sardia, Mowafaq Mohammad Kethyan
出版: (2013)

Enhancement Of Efficiency Of GaN-On-GaN Led By Wet Etching Roughening On N-Face GaN Substrate
由: Alias, Ezzah A., et al.
出版: (2020)

Plasma-assisted MBE growth of AlN/GaN/AlNheterostructures on Si (111) substrate
由: M.Z. Mohd Yusoff, et al.
出版: (2014)

Embedded AlN/GaN multi-layer for enhanced crystal quality and surface morphology of semi-polar (11-22) GaN on m-plane sapphire
由: Omar, Al-Zuhairi, et al.
出版: (2018)

Surface reaction of undoped AlGaN/GaN HEMT based two terminal device in H+ and OH- ion-contained aqueous solution
由: Mastura Shafinaz Zainal Abidin,, et al.
出版: (2013)

GaN Schottky barrier photodiode on Si (1 1 1) with low-temperature-grown cap layer
由: Chuah, Lee Siang, et al.
出版: (2009)

Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN
由: Zahir, Norhilmi Mohd, et al.
出版: (2021)

Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN
由: Zahir, Norhilmi, et al.
出版: (2021)

Effect of discharge power on the properties of GaN thin films on AlN-(002) prepared by magnetron sputtering deposition
由: Muliana, Tahan, et al.
出版: (2020)

A High-Efficiency Ultra-Broadband Mixed-Mode GaN HEMT Power Amplifier
由: Krishnamoorthy, Ragavan, et al.
出版: (2018)

Experimental Characterization of Indium Gallium Arsenide Thermophotovoltaic Cell At 2.6 Micrometer Cut-Off Wavelenght
由: Susenthiran a/l Kumaran
出版: (2023)

High accuracy linear and nonlinear models for pHEMT devices
由: Norhawati, Ahmad, Dr.
出版: (2014)

Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED
由: Samsudin, Muhammad Esmed Alif, et al.
出版: (2021)

First-principles calculations of the structural and electronic properties of AIN, GaN, InN, AIGaN and InGaN
由: Beloufa, Abbes, et al.
出版: (2009)

Efficiency Droop Of InGaN/GaN Led With Different Indium Composition
由: Samsudin, M. E. A., et al.
出版: (2019)

Enhancement Of Efficiency Of GaN-on-GaN LED By Wet Etching Roughening On N-Face Gan Substrate
由: Alias, Ezzah A., et al.
出版: (2020)

Adaptive impedance matching in microwave and terahertz metamaterial absorbers using PIN diodes and GaN HEMTs
由: Liu, Yunpeng, et al.
出版: (2024)