DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications

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書誌詳細
主要な著者:	Murugapandiyan, P., Ravimaran, S., William, J.
その他の著者:	murugavlsi@gmail.com
フォーマット:	論文
言語:	English
出版事項:	Universiti Malaysia Perlis (UniMAP) 2017
主題:	HEMT Back-barrier Recessed gate Cut-off frequency Regrown ohmic contact Short channel effects
オンライン･アクセス:	http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49953
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

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