Optimization of Resistance Load in 4T-Static Random-Access Memory Cell Based on Silicon Nanowire Transistor

This study explores optimization of resistance load (R-Load) of four silicon nanowire transistor (SiNWT)-based static random-access memory (SRAM) cell. Noise margins and inflection voltage of butterfly characteristics with static power consumption of SRAM cell are used as limiting factors in this op...

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Bibliographic Details
Main Author: Hashim, Yasir
Format: Article
Language:English
English
Published: American Scientific Publishers 2018
Subjects:
Online Access:http://umpir.ump.edu.my/id/eprint/19249/1/17JNN-13956.pdf
http://umpir.ump.edu.my/id/eprint/19249/7/ftech-2018-yasir.pdf
http://umpir.ump.edu.my/id/eprint/19249/
https://doi.org/10.1166/jnn.2018.13956
https://doi.org/10.1166/jnn.2018.13956
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