Impact of nucleation temperature on growth uniformity of GaN on 4-inch dome-patterned sapphire substrate

Considerable demands for energy-efficient visible LEDs nowadays have led to a pressing need for high-quality GaN/sapphire templates with large diameters. One of the major challenges to achieve the goal is to obtain good growth uniformity across the entire area of the templates. This paper attempts t...

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Bibliographic Details
Main Authors: Azmi, Nor Syafiqah, Mazlan, Muhammad Naim, Taib, Mohd Ikram Md, Ahmad, Mohd Anas, Samsuri, Mohd Shahrul Nizam, Mansor, Marwan, Hisyam, Muhammad Iznul, Abu Bakar, Ahmad Shuhaimi, Zainal, Norzaini
Format: Article
Published: Elsevier 2024
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Online Access:http://eprints.um.edu.my/45724/
https://doi.org/10.1016/j.mssp.2024.108177
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