Impact of nucleation temperature on growth uniformity of GaN on 4-inch dome-patterned sapphire substrate
Considerable demands for energy-efficient visible LEDs nowadays have led to a pressing need for high-quality GaN/sapphire templates with large diameters. One of the major challenges to achieve the goal is to obtain good growth uniformity across the entire area of the templates. This paper attempts t...
Saved in:
Main Authors: | Azmi, Nor Syafiqah, Mazlan, Muhammad Naim, Taib, Mohd Ikram Md, Ahmad, Mohd Anas, Samsuri, Mohd Shahrul Nizam, Mansor, Marwan, Hisyam, Muhammad Iznul, Abu Bakar, Ahmad Shuhaimi, Zainal, Norzaini |
---|---|
Format: | Article |
Published: |
Elsevier
2024
|
Subjects: | |
Online Access: | http://eprints.um.edu.my/45724/ https://doi.org/10.1016/j.mssp.2024.108177 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
GaN nucleation on patterned sapphire substrate with different shapes for improved GaN overgrowth
by: Md. Taib, M. Ikram, et al.
Published: (2022) -
Effect Of Nucleation Time On GaN Layer Grown On Different Shape Of Patterned Sapphire Substrate
by: Taib, Muhamad Ikram Md, et al.
Published: (2020) -
Effect Of Nucleation Time On GaN Layer
Grown On Different Shape Of Patterned Sapphire Substrate
by: Taib, Muhamad Ikram Md, et al.
Published: (2020) -
Influence of post-ammonia annealing temperature on e-beam evaporation deposited GaN layer on patterned sapphire substrate
by: Zainal, Norzaini, et al.
Published: (2020) -
Effect Of GaN Nucleation Layer Temperature On Structural And Morphological Properties Of Ud-GaN Template Grown On Pss
by: Ahmad, M. A., et al.
Published: (2019)