Impact of nucleation temperature on growth uniformity of GaN on 4-inch dome-patterned sapphire substrate
Considerable demands for energy-efficient visible LEDs nowadays have led to a pressing need for high-quality GaN/sapphire templates with large diameters. One of the major challenges to achieve the goal is to obtain good growth uniformity across the entire area of the templates. This paper attempts t...
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Main Authors: | , , , , , , , , |
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Format: | Article |
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Elsevier
2024
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Subjects: | |
Online Access: | http://eprints.um.edu.my/45724/ https://doi.org/10.1016/j.mssp.2024.108177 |
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