Fabrication of ZnO nanowire device using top-down approach
ZnO nanowire devices were fabricated from top-down using optical lithography. The nanowires are formed from anisotropic etch of 100 nm Filtered Cathodic Vacuum Arc (FCVA) deposited ZnO thin film. The nanowires are characterized using SEM and Raman spectroscopy via image mapping. The current-voltage...
Saved in:
Main Authors: | Mohamed Sultan, Suhana, Sun, K., Partridge, J., Allen, M., Ashburn, P., Chong, H. M. H. |
---|---|
Format: | Book Section |
Published: |
IEEE Explorer
2011
|
Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/29709/ http://dx.doi.org/10.1109/ULIS.2011.5757956 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Effect of phosphate buffered saline solutions on top-down fabricated ZnO nanowire field effect transistor
by: Sultan, S. M., et al.
Published: (2017) -
Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors
by: Mohamed Sulthan, Suhana, et al.
Published: (2014) -
Top-down fabrication process of ZnO NWFETs
by: Ditshego, Nonofo M. J., et al.
Published: (2019) -
Top-down fabrication process for ZNO NWFETS
by: Mohamed Sultan, Suhana, et al.
Published: (2018) -
Top-down fabrication of single crystal silicon nanowire using optical lithography
by: Za'bah, Nor Farahidah, et al.
Published: (2012)