Top-down fabrication process of ZnO NWFETs
ZnO NWFETs were fabricated with and without Al2O3 passivation. This was done by developing a new recipe for depositing the thin film of ZnO. By using a high donor concentration of 1.7 x 1018 cm-3 for the thin film, contact resistance values were lowered (passivated device had Rcon = 2.5 x 104 Ω; unp...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Trans Tech Publications Ltd
2019
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/87832/1/SuhanaMohamedSultan2019_TopDownFabricationProcessofZnoNwfets.pdf http://eprints.utm.my/id/eprint/87832/ http://dx.doi.org/10.4028/www.scientific.net/JNanoR.57.77 |
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