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Fabrication of ZnO nanowire device using top-down approach

ZnO nanowire devices were fabricated from top-down using optical lithography. The nanowires are formed from anisotropic etch of 100 nm Filtered Cathodic Vacuum Arc (FCVA) deposited ZnO thin film. The nanowires are characterized using SEM and Raman spectroscopy via image mapping. The current-voltage...

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Bibliographic Details
Main Authors: Mohamed Sultan, Suhana, Sun, K., Partridge, J., Allen, M., Ashburn, P., Chong, H. M. H.
Format: Book Section
Published: IEEE Explorer 2011
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/29709/
http://dx.doi.org/10.1109/ULIS.2011.5757956
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spelling my.utm.297092017-02-04T08:32:21Z http://eprints.utm.my/id/eprint/29709/ Fabrication of ZnO nanowire device using top-down approach Mohamed Sultan, Suhana Sun, K. Partridge, J. Allen, M. Ashburn, P. Chong, H. M. H. TK Electrical engineering. Electronics Nuclear engineering ZnO nanowire devices were fabricated from top-down using optical lithography. The nanowires are formed from anisotropic etch of 100 nm Filtered Cathodic Vacuum Arc (FCVA) deposited ZnO thin film. The nanowires are characterized using SEM and Raman spectroscopy via image mapping. The current-voltage characteristics showed a typical ohmic behaviour after contact annealing, reflecting the influence of the lowering of contact barriers between the ZnO nanowire device and the Al metal electrode. IEEE Explorer 2011 Book Section PeerReviewed Mohamed Sultan, Suhana and Sun, K. and Partridge, J. and Allen, M. and Ashburn, P. and Chong, H. M. H. (2011) Fabrication of ZnO nanowire device using top-down approach. In: 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011. IEEE Explorer, pp. 77-79. ISBN 978-145770090-3 http://dx.doi.org/10.1109/ULIS.2011.5757956 10.1109/ULIS.2011.5757956
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Mohamed Sultan, Suhana
Sun, K.
Partridge, J.
Allen, M.
Ashburn, P.
Chong, H. M. H.
Fabrication of ZnO nanowire device using top-down approach
description ZnO nanowire devices were fabricated from top-down using optical lithography. The nanowires are formed from anisotropic etch of 100 nm Filtered Cathodic Vacuum Arc (FCVA) deposited ZnO thin film. The nanowires are characterized using SEM and Raman spectroscopy via image mapping. The current-voltage characteristics showed a typical ohmic behaviour after contact annealing, reflecting the influence of the lowering of contact barriers between the ZnO nanowire device and the Al metal electrode.
format Book Section
author Mohamed Sultan, Suhana
Sun, K.
Partridge, J.
Allen, M.
Ashburn, P.
Chong, H. M. H.
author_facet Mohamed Sultan, Suhana
Sun, K.
Partridge, J.
Allen, M.
Ashburn, P.
Chong, H. M. H.
author_sort Mohamed Sultan, Suhana
title Fabrication of ZnO nanowire device using top-down approach
title_short Fabrication of ZnO nanowire device using top-down approach
title_full Fabrication of ZnO nanowire device using top-down approach
title_fullStr Fabrication of ZnO nanowire device using top-down approach
title_full_unstemmed Fabrication of ZnO nanowire device using top-down approach
title_sort fabrication of zno nanowire device using top-down approach
publisher IEEE Explorer
publishDate 2011
url http://eprints.utm.my/id/eprint/29709/
http://dx.doi.org/10.1109/ULIS.2011.5757956
_version_ 1643648358242320384
score 13.160551

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