Effects Of Three-Step Magnesium Doping In p-GaN Layer On The Properties Of InGaN Based Light Emitting Diode
In this works, indium gallium nitride (InGaN) based light emitting diode (LED) was grown on a 4-inch c-plane patterned sapphire substrate using metal-organic chemical vapor deposition. Three-step magnesium (Mg) doping profile was proposed to enhance the efficiency of the LED and the attention was pa...
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| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48968/1/MNRG_ZH08.pdf http://eprints.usm.my/48968/ |
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