Effects Of V/III Ratio Of InGaN Quantum Well On The Properties Of Near Ultraviolet Light Emitting Diodes

• Main Authors: Sahar, Mohd Ann Amirul Zulffiqal Md, Hassan, Zainuriah, Sha, Shiong Ng, Way, Foong Lim, Khai, Sheen Lau, Alias, Ezzah A., Ahmad, Mohd Anas, Hamzah, Nur Atiqah, Asri, Rahil Izzati Mohd
• Format: Conference or Workshop Item
• Language: English
• Published: 2020
• Subjects: QC1-999 Physics
• Online Access: http://eprints.usm.my/48948/1/MNRG_ZH01.pdf; http://eprints.usm.my/48948/

In this work, indium gallium nitride (InGaN) based near ultraviolet light emitting diode (NUV-LED) has been grown on a 2-inch c-plane patterned sapphire substrate at atmospheric pressure using metal organic chemical vapor deposition (MOCVD). The attention was paid to the effects of the V/III ratio o...