Degradation of InGaN LEDs by proton radiation
Light-emitting diodes (LEDs) made of nitride are appealing because they can withstand high temperatures and be used in harsh environments. The degradation behaviour of the device performance on Indium Gallium Nitride (InGaN) LEDs (light emitting diodes) irradiated by 2-MeV protons with the fluence o...
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| Main Authors: | , , |
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| Format: | Proceeding Paper |
| Language: | English English |
| Published: |
IEEE
2023
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/109668/1/109668_Degradation%20of%20InGaN.pdf http://irep.iium.edu.my/109668/2/109668_Degradation%20of%20InGaN_SCOPUS.pdf http://irep.iium.edu.my/109668/ https://ieeexplore.ieee.org/abstract/document/10147696 |
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