Inhomogeneity Of An InGaN Based Blue LED Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT)

• Main Authors: Ahmad, Mohd Anas, Hamzah, Nur Atiqah, Asri, Rahil Izzati Mohd, Zainal, Norzaini, Ng, Sha Shiong, Hassan, Zainuriah
• Format: Conference or Workshop Item
• Language: English
• Published: 2020
• Subjects: QC1-999 Physics
• Online Access: http://eprints.usm.my/49054/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2051.pdf; http://eprints.usm.my/49054/

InGaN/GaN multiquantum wells (MQWs) grown on 2-inch c-plane patterned sapphire substrate using metal-organic chemical vapor deposition was characterized by secondary ion mass spectrometry and atom probe tomography. The average In mole fraction by APT was found to be around 16% in the InGaN well whic...