Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication

• Main Authors: Lee, Mei Yee, Mat Jubadi, Wasuzarina
• Other Authors: Mahmud, Farhanahani
• Format: Book Section
• Language: English
• Published: Penerbit UTHM 2020
• Subjects: TK7800-8360 Electronics; TK7885-7895 Computer engineering. Computer hardware
• Online Access: http://eprints.uthm.edu.my/2746/1/Ch05.pdf; http://eprints.uthm.edu.my/2746/

Nowadays, semiconductor lighting industry has been developed rapidly throughout the world. Light emitting diodes (LEDs) are known as a compound semiconductor device that can emit visible light when there is an electron current passed through it. In recent years, the group III – nitride semiconducto...