Inhomogeneity Of An InGaN Based Blue Led Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT)

InGaN/GaN multiquantum wells (MQWs) grown on 2-inch c-plane patterned sapphire substrate using metal-organic chemical vapor deposition was characterized by secondary ion mass spectrometry and atom probe tomography. The average In mole fraction by APT was found to be around 16% in the InGaN well whic...

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Bibliographic Details
Main Authors: Ahmad, Mohd Anas, Hamzah, Nur Atiqah, Asri, Rahil Izzati Mohd, Zainal, Norzaini, Ng, Sha Shiong, Hassan, Zainuriah
Format: Conference or Workshop Item
Language:English
Published: 2020
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Online Access:http://eprints.usm.my/48952/1/MNRG_ZH02.pdf
http://eprints.usm.my/48952/
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