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Design and simulation of Gallium Arsenide based Schottky diodes for RF applications

Today, being the dawn of a new RF technology wave, the requirement of making semiconductor device which have greater speed in performance, which is realized either as a higher maximum frequency of operation or higher logic switching speeds. Gallium Arsenide (GaAs) based Schottky Diodes have superior...

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書目詳細資料
主要作者:	Ong Chee Meng
其他作者:	Noraini Othman (Advisor)
格式:	Learning Object
語言:	English
出版:	Universiti Malaysia Perlis 2008
主題:	Semiconductors Silicon Gallium arsenide Radio frequency integrated circuits Schottky Diodes
在線閱讀:	http://dspace.unimap.edu.my/xmlui/handle/123456789/1966
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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