The study on the effects of varying Dopant concentration and Diffusion Time in the design of Silicon Avalanche Diode with minimum Vbr of 120v+20% by simulation

• Main Author: Yip Siew Ling
• Other Authors: Noraini Othman (Advisor)
• Format: Learning Object
• Language: English
• Published: Universiti Malaysia Perlis 2008
• Subjects: Silicon; Semiconductor engineering; Computer simulation; Integrated circuits; Diodes, Avalanche.; Silicon diode; Computer-aided design
• Online Access: http://dspace.unimap.edu.my/xmlui/handle/123456789/1952

Technology CAD (TCAD) refers to the use of computer simulation to model semiconductor processing and device operation. TCAD has two major functions which are process simulation and device simulation. In this project, Synopsys Taurus Workbench including TSUPREM-4 and Medici is used as a virtual IC fa...