Improved series resistance model for CMOS ESD diodes

• Main Authors: Kamal N.B., Kordesch A.V., Ahmad I.B.
• Other Authors: 26633062900
• Format: Conference paper
• Published: 2023
• Subjects: Electrostatic devices; Electrostatic discharge; Parameter extraction; Semiconductor diodes; Simulators; Circuit designers; Commercial simulators; Data measurements; Different slopes; ESD protection; ESD protection circuit; I - V curve; Linear relationships; Model extraction; P-n Diode; Series resistances; Diodes

Compact diode models normally available in commercial simulators like Spectre or HSPICE do not scale the series resistance with P-N distance. The standard diode models scale with drawn area, assuming the current is vertical. However the diodes used for ESD protection in CMOS are operating as lateral...