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Design and simulation of Gallium Arsenide based Schottky diodes for RF applications

Today, being the dawn of a new RF technology wave, the requirement of making semiconductor device which have greater speed in performance, which is realized either as a higher maximum frequency of operation or higher logic switching speeds. Gallium Arsenide (GaAs) based Schottky Diodes have superior...

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Bibliographic Details
Main Author: Ong Chee Meng
Other Authors: Noraini Othman (Advisor)
Format: Learning Object
Language:English
Published: Universiti Malaysia Perlis 2008
Subjects:
Semiconductors
Silicon
Gallium arsenide
Radio frequency integrated circuits
Schottky Diodes
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/1966
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http://dspace.unimap.edu.my/xmlui/handle/123456789/1966

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