Design and simulation of Gallium Arsenide based Schottky diodes for RF applications

Today, being the dawn of a new RF technology wave, the requirement of making semiconductor device which have greater speed in performance, which is realized either as a higher maximum frequency of operation or higher logic switching speeds. Gallium Arsenide (GaAs) based Schottky Diodes have superior...

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Main Author: Ong Chee Meng
Other Authors: Noraini Othman (Advisor)
Format: Learning Object
Language:English
Published: Universiti Malaysia Perlis 2008
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Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/1966
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spelling my.unimap-19662008-09-05T08:20:55Z Design and simulation of Gallium Arsenide based Schottky diodes for RF applications Ong Chee Meng Noraini Othman (Advisor) Semiconductors Silicon Gallium arsenide Radio frequency integrated circuits Schottky Diodes Today, being the dawn of a new RF technology wave, the requirement of making semiconductor device which have greater speed in performance, which is realized either as a higher maximum frequency of operation or higher logic switching speeds. Gallium Arsenide (GaAs) based Schottky Diodes have superior RF performance with a low forward voltage drop and a very fast switching action compared silicon based diodes due to its high speed operation. Perhaps the primary benefit of GaAs comes from its electron-dynamic properties. In equivalently doped n-type GaAs and silicon, the effective mass of the electric charge carriers in GaAs is far less than that in silicon. This means that the electrons in GaAs are accelerated to higher velocities in less time. In this project, the Synopsys Taurus Workbench of MEDICI is used to simulate the GaAs based Schottky Diode to generate the device structure and model the device electrical characteristics. The objective of this project is to design GaAs-based Schottky Diodes for operation of cut-off frequency (Ft) excess 10G Hz for RF application. An initiall Schottky Diode device structure was based on the model from Telecom Malaysia Research and Development Sdn. Bhd was generated and then the electrical characteristics were extracted to obtain the cut-off frequency (Ft). The next step is to redesign a Schottky Diode which have operating cut-off frequency (Ft) excess 10G Hz by study the effect on cut-off frequency (Ft.) by varying GaAs layer doping concentration, layer thickness, device length, comparison of nitride and oxide passivation layer and lastly varying the metal work function used in metal-semiconductor junction. From all the experiment method tested as mentioned above, finally a Schottky Diode which has cut-off frequency of 10.13027G Hz was able to be designed. 2008-09-05T08:20:55Z 2008-09-05T08:20:55Z 2008-04 Learning Object http://hdl.handle.net/123456789/1966 en Universiti Malaysia Perlis School of Microelectronic Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Semiconductors
Silicon
Gallium arsenide
Radio frequency integrated circuits
Schottky Diodes
spellingShingle Semiconductors
Silicon
Gallium arsenide
Radio frequency integrated circuits
Schottky Diodes
Ong Chee Meng
Design and simulation of Gallium Arsenide based Schottky diodes for RF applications
description Today, being the dawn of a new RF technology wave, the requirement of making semiconductor device which have greater speed in performance, which is realized either as a higher maximum frequency of operation or higher logic switching speeds. Gallium Arsenide (GaAs) based Schottky Diodes have superior RF performance with a low forward voltage drop and a very fast switching action compared silicon based diodes due to its high speed operation. Perhaps the primary benefit of GaAs comes from its electron-dynamic properties. In equivalently doped n-type GaAs and silicon, the effective mass of the electric charge carriers in GaAs is far less than that in silicon. This means that the electrons in GaAs are accelerated to higher velocities in less time. In this project, the Synopsys Taurus Workbench of MEDICI is used to simulate the GaAs based Schottky Diode to generate the device structure and model the device electrical characteristics. The objective of this project is to design GaAs-based Schottky Diodes for operation of cut-off frequency (Ft) excess 10G Hz for RF application. An initiall Schottky Diode device structure was based on the model from Telecom Malaysia Research and Development Sdn. Bhd was generated and then the electrical characteristics were extracted to obtain the cut-off frequency (Ft). The next step is to redesign a Schottky Diode which have operating cut-off frequency (Ft) excess 10G Hz by study the effect on cut-off frequency (Ft.) by varying GaAs layer doping concentration, layer thickness, device length, comparison of nitride and oxide passivation layer and lastly varying the metal work function used in metal-semiconductor junction. From all the experiment method tested as mentioned above, finally a Schottky Diode which has cut-off frequency of 10.13027G Hz was able to be designed.
author2 Noraini Othman (Advisor)
author_facet Noraini Othman (Advisor)
Ong Chee Meng
format Learning Object
author Ong Chee Meng
author_sort Ong Chee Meng
title Design and simulation of Gallium Arsenide based Schottky diodes for RF applications
title_short Design and simulation of Gallium Arsenide based Schottky diodes for RF applications
title_full Design and simulation of Gallium Arsenide based Schottky diodes for RF applications
title_fullStr Design and simulation of Gallium Arsenide based Schottky diodes for RF applications
title_full_unstemmed Design and simulation of Gallium Arsenide based Schottky diodes for RF applications
title_sort design and simulation of gallium arsenide based schottky diodes for rf applications
publisher Universiti Malaysia Perlis
publishDate 2008
url http://dspace.unimap.edu.my/xmlui/handle/123456789/1966
_version_ 1643787507606749184
score 13.222552