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Gaussian distribution of inhomogeneous barrier height in nanocrystalline graphite (NCG)/p-Si Schottky diodes

Schottky characteristics of nanocrystalline graphite/p-Si junction were investigated using current-voltage measurements at various temperatures between 298 and 473 K. Using the thermionic emission theory, the extracted ideality factor reduces by 77% while Schottky barrier height increases by 46% wit...

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書誌詳細
主要な著者:	Nawawi, Azfar Abid, Mohamed Sultan, Suhana, Abd. Rahman, Shaharin Fadzli, Pu, Suan Hui
フォーマット:	論文
出版事項:	Institute of Physics Publishing 2019
主題:	QA75 Electronic computers. Computer science
オンライン･アクセス:	http://eprints.utm.my/id/eprint/88749/ http://dx.doi.org/10.7567/1347-4065/ab1e37
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

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