Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation

• المؤلفون الرئيسيون: Mohd Khairi, Mohamad Azim, Ab Rahim, Rosminazuin, Saidin, Norazlina, Abdullah, Yusof, Hasbullah, Nurul Fadzlin
• التنسيق: مقال
• اللغة: English; English
• منشور في: Lembaga Penerbitan dan Publikasi Ilmiah (LPPI), Universitas Ahmad Dahlan 2019
• الموضوعات: QC Physics; TK Electrical engineering. Electronics Nuclear engineering; TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
• الوصول للمادة أونلاين: http://irep.iium.edu.my/72556/1/72556_Silicon%20carbide%20schottky%20diodes%20forward.pdf; http://irep.iium.edu.my/72556/7/72556_Silicon%20carbide%20schottky%20diodes%20forward%20and%20reverse%20current%20properties%20upon%20fast%20electron%20radiation_Scopus.pdf; http://irep.iium.edu.my/72556/; http://journal.portalgaruda.org/index.php/EEI/article/view/1503

This paper investigates on the reaction of 10 and 15MGy, 3MeV electron irradiation upon off-the-shelves (commercial) Silicon Carbide Schottky diodes from Infineon Technologies (model: IDH08SG60C) and STMicroelectronics (model: STPSC806). Such irradiation reduces the forward-bias current. The reducti...