Performance analysis of si schottky diode family in DC-DC converter
The unipolar-based devices, silicon schottky (Si) and silicon carbide schottky (SiC) power diodes are investigated for their reverse recovery transient responses and the effects on the switching losses of the MOSFET in the DC-DC converter. Two sets of inductive load chopper circuits are simulated us...
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| Main Authors: | , |
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| Format: | Conference or Workshop Item |
| Published: |
2009
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| Subjects: | |
| Online Access: | http://eprints.utp.edu.my/331/1/paper.pdf http://www.scopus.com/inward/record.url?eid=2-s2.0-70449635689&partnerID=40&md5=9f2cec9cf9448cb8cae573f79bdbbfe7 http://eprints.utp.edu.my/331/ |
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