Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature

• Main Authors: Hasbullah, Nurul Fadzlin, Mohd Khairi, Mohamad Azim, Abdullah, Yusof
• Format: Article
• Language: English
• Published: Inderscience Enterprises Ltd. 2019
• Subjects: T Technology (General); T175 Industrial research. Research and development; TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://irep.iium.edu.my/72560/1/Editor%20final%20ver._Response%20of%20Electron-Irradiated%20Silicon%20Carbide%20Schottky%20Power%20Diodes%20at%20Elevated%20Temperature.pdf; http://irep.iium.edu.my/72560/; https://www.inderscience.com/info/ingeneral/forthcoming.php?jcode=ijpelec

Thermal dependence experiments have been carried out on silicon carbide Schottky power diodes. The devices were exposed to 3 MeV electrons with 10 MGy dose. Current density-voltage (~300 K to ~490 K) characterization have been used for the investigation. The results show that, at the highest tested...