Fabrication and characterization of graphene-on-silicon schottky diode for advanced power electronic design

• Main Authors: Mohd Rofei Mat Hussin,, Muhammad Mahyiddin Ramli,, Sharaifah Kamariah Wan Sabli,, Iskhandar Md Nasir,, Mohd Ismahadi Syono,, Wong, H.Y., Mukter Zaman,
• Format: Article
• Language: English
• Published: Penerbit Universiti Kebangsaan Malaysia 2017
• Online Access: http://journalarticle.ukm.my/11133/1/18%20Mohd%20Rofei.pdf; http://journalarticle.ukm.my/11133/; http://www.ukm.my/jsm/malay_journals/jilid46bil7_2017/KandunganJilid46Bil7_2017.html

In this study, graphene-on-silicon process technology was developed to fabricate a power rectifier Schottky diode for efficiency improvement in high operating temperature. Trench-MOS-Barrier-Schottky (TMBS) diode structure was used to enhance the device performance. The main objective of this resear...