Gaussian distribution of inhomogeneous barrier height in nanocrystalline graphite (NCG)/p-Si Schottky diodes
Schottky characteristics of nanocrystalline graphite/p-Si junction were investigated using current-voltage measurements at various temperatures between 298 and 473 K. Using the thermionic emission theory, the extracted ideality factor reduces by 77% while Schottky barrier height increases by 46% wit...
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| Main Authors: | , , , |
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| 格式: | Article |
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Institute of Physics Publishing
2019
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| 在線閱讀: | http://eprints.utm.my/id/eprint/88749/ http://dx.doi.org/10.7567/1347-4065/ab1e37 |
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