A review of graphene based field effect transistor architecture and channel geometry
The aggressive scaling of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in nanometer scale promises low-power consumption, low energy delay product, high density as well as high processor speed. However, this phenomenon leads to short channel effects when the scaling approaches its phys...
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Main Authors: | Johari, Zaharah, Ismail, Razali |
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Format: | Article |
Published: |
American Scientific Publishers
2015
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Online Access: | http://eprints.utm.my/id/eprint/55897/ http://dx.doi.org/10.1166/sam.2015.2266 |
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