Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.

• Main Authors: Thahab, S M, Abu Hassan, H., Hassan, Z.
• Format: Conference or Workshop Item
• Language: English
• Published: 2007
• Subjects: QC1 Physics (General)
• Online Access: http://eprints.usm.my/14835/1/paper10.pdf; http://eprints.usm.my/14835/

Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) was simulated by using ISETCAD software with varying substrate type, gate length and source drain resistances.