Modeling and simulation of single-electron transistors
Single-electron transistor (SET) can offer lower power consumption and faster operating speed in the era of nanotechnology. It operates in single electronics regime where only one electron can tunnel from source to drain via island. Thus single electron tunneling is the phenomena that describe the...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Ibnu Sina Institute for Fundamental Science Studies
2005
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/434/1/jfs001006.pdf http://eprints.utm.my/id/eprint/434/ http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.595.519 |
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