Ballistic saturation velocity of quasi-2D low-dimensional nanoscale field effect transistor (FET)
The saturation velocity is found to be ballistic regardless of the device dimensions. The ballistic intrinsic velocity is based on streamlining of the randomly oriented velocity vectors in zero electric field. In the degenerate realm, the saturation velocity is shown to be the Fermi velocity that is...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Book Section |
| Published: |
Amer Inst Physics
2009
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/13220/ http://dx.doi.org/10.1063/1.3160152 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|