Characteristics Of InGaN Based Red Led Epiwafer
This paper describes a preliminary work of developing InGaN based red LED using two-flow MOCVD reactor, focussing on characteristics of the LED epiwafer from the aspects of optics, surface and crystalline structure. The active region multiquantum wells (MQWs) of the LED consists of In0.3Ga0.7N quant...
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| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48868/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20145.pdf http://eprints.usm.my/48868/ |
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