High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor
In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 �m. The results of testing PSi for hydrogen ion sensing in different pH bu...
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Main Authors: | Al-Hardan, Naif H., Abdul Hamid, Muhammad Azmi, M. Ahmed, Naser, Jalar, Azman, Shamsudin, Roslinda, Kamil Othman, Norinsan, Lim, Kar Keng, Chiu, Weesiong, N. Al-Rawi, Hamzah |
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Format: | Article |
Language: | English |
Published: |
MDPI
2016
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Subjects: | |
Online Access: | http://eprints.usm.my/36977/1/%28High_Sensitivity_pH_Sensor%29_sensors-16-00839.pdf http://eprints.usm.my/36977/ http://www.mdpi.com/1424-8220/16/6/839 |
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