Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.
Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) was simulated by using ISETCAD software with varying substrate type, gate length and source drain resistances.
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2007
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| Subjects: | |
| Online Access: | http://eprints.usm.my/14835/1/paper10.pdf http://eprints.usm.my/14835/ |
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