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Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.

Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) was simulated by using ISETCAD software with varying substrate type, gate length and source drain resistances.

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Bibliographic Details
Main Authors: Thahab, S M, Abu Hassan, H., Hassan, Z.
Format: Conference or Workshop Item
Language:English
Published: 2007
Subjects:
QC1 Physics (General)
Online Access:http://eprints.usm.my/14835/1/paper10.pdf
http://eprints.usm.my/14835/
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id my.usm.eprints.14835
record_format eprints
spelling my.usm.eprints.14835 http://eprints.usm.my/14835/ Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects. Thahab, S M Abu Hassan, H. Hassan, Z. QC1 Physics (General) Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) was simulated by using ISETCAD software with varying substrate type, gate length and source drain resistances. 2007 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/14835/1/paper10.pdf Thahab, S M and Abu Hassan, H. and Hassan, Z. (2007) Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects. In: Proceeding Of Malaysia-Japan International Symposium On Advanced Technology 2007 (MJISAT 2007), 12-15 November 2007, Seri Pacific Hotel, Kuala Lumpur.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1 Physics (General)
spellingShingle QC1 Physics (General)
Thahab, S M
Abu Hassan, H.
Hassan, Z.
Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.
description Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) was simulated by using ISETCAD software with varying substrate type, gate length and source drain resistances.
format Conference or Workshop Item
author Thahab, S M
Abu Hassan, H.
Hassan, Z.
author_facet Thahab, S M
Abu Hassan, H.
Hassan, Z.
author_sort Thahab, S M
title Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.
title_short Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.
title_full Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.
title_fullStr Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.
title_full_unstemmed Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.
title_sort al0.15ga0.85n/gan heterostructure field effect transistors (hfet)device structure optimization and thermal effects.
publishDate 2007
url http://eprints.usm.my/14835/1/paper10.pdf
http://eprints.usm.my/14835/
_version_ 1643702778879541248
score 13.209306

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