Effect of device parameters on transmission coefficient of Al₀.₃Ga₀.₈N/GaN Resonant Tunneling Diode grown on silicon substrate

• Main Authors: Chowdhury, Subhra, Biswas, Dhrubes
• Other Authors: [e-mail]
• Format: Article
• Language: English
• Published: Universiti Malaysia Perlis 2016
• Subjects: AlGaN/GaN RTD; Resonant Tunneling Diode; Mobility; Transmission coefficient
• Online Access: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41289

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