Description: Effect of device parameters on transmission coefficient of Al₀.₃Ga₀.₈N/GaN Resonant Tunneling Diode grown on silicon substrate

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Bibliographic Details
Main Authors:	Chowdhury, Subhra, Biswas, Dhrubes
Other Authors:	subhrachowdhury1987@gmail.com
Format:	Article
Language:	English
Published:	Universiti Malaysia Perlis 2016
Subjects:	AlGaN/GaN RTD Resonant Tunneling Diode Mobility Transmission coefficient
Online Access:	http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41289
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Summary:	Link to publisher's homepage at http://ijneam.unimap.edu.my/