Effect of device parameters on transmission coefficient of Al₀.₃Ga₀.₈N/GaN Resonant Tunneling Diode grown on silicon substrate
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Universiti Malaysia Perlis
2016
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my.unimap-412892017-11-21T03:09:59Z Effect of device parameters on transmission coefficient of Al₀.₃Ga₀.₈N/GaN Resonant Tunneling Diode grown on silicon substrate Chowdhury, Subhra Biswas, Dhrubes subhrachowdhury1987@gmail.com AlGaN/GaN RTD Resonant Tunneling Diode Mobility Transmission coefficient Link to publisher's homepage at http://ijneam.unimap.edu.my/ AlGaN/GaN Resonant Tunneling Diodes (RTD) have increasingly become important since these are ideally suited for high power, high frequency performance and capable of providing negative differential resistance at room temperature. Transmission coefficient (TC) is an important factor to determine the negative differential resistance (NDR) and peak-to-valley ratio of RTD. An analytical model is developed here to predict the variation of Tc of AlGaN/GaN RTD structure with life time of carrier which is affected by different factors such as doping concentration, temperature and dislocation density in the film grown on substrate of different material. A comparative study of performance of RTD in terms of mobility of carrier in GaN grown on silicon substrate is also studied in this analysis. 2016-04-13T04:29:45Z 2016-04-13T04:29:45Z 2013 Article International Journal of Nanoelectronics and Materials, vol.6 (2), 2013, pages 129-137 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41289 en Universiti Malaysia Perlis |
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AlGaN/GaN RTD Resonant Tunneling Diode Mobility Transmission coefficient |
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AlGaN/GaN RTD Resonant Tunneling Diode Mobility Transmission coefficient Chowdhury, Subhra Biswas, Dhrubes Effect of device parameters on transmission coefficient of Al₀.₃Ga₀.₈N/GaN Resonant Tunneling Diode grown on silicon substrate |
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Link to publisher's homepage at http://ijneam.unimap.edu.my/ |
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subhrachowdhury1987@gmail.com |
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subhrachowdhury1987@gmail.com Chowdhury, Subhra Biswas, Dhrubes |
| format |
Article |
| author |
Chowdhury, Subhra Biswas, Dhrubes |
| author_sort |
Chowdhury, Subhra |
| title |
Effect of device parameters on transmission coefficient of Al₀.₃Ga₀.₈N/GaN Resonant Tunneling Diode grown on silicon substrate |
| title_short |
Effect of device parameters on transmission coefficient of Al₀.₃Ga₀.₈N/GaN Resonant Tunneling Diode grown on silicon substrate |
| title_full |
Effect of device parameters on transmission coefficient of Al₀.₃Ga₀.₈N/GaN Resonant Tunneling Diode grown on silicon substrate |
| title_fullStr |
Effect of device parameters on transmission coefficient of Al₀.₃Ga₀.₈N/GaN Resonant Tunneling Diode grown on silicon substrate |
| title_full_unstemmed |
Effect of device parameters on transmission coefficient of Al₀.₃Ga₀.₈N/GaN Resonant Tunneling Diode grown on silicon substrate |
| title_sort |
effect of device parameters on transmission coefficient of al₀.₃ga₀.₈n/gan resonant tunneling diode grown on silicon substrate |
| publisher |
Universiti Malaysia Perlis |
| publishDate |
2016 |
| url |
http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41289 |
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1643802791707148288 |
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13.214268 |