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Gate Oxide Integrity (GOI) Characterization For Deep Submicron CMOS Device

Since the early days of Very Large Scale Integration (VLSI) era, the scaling of gate oxide thickness has been instrumental in controlling the short channel related effects in state-of-the-art device structure, as MOS gate dimensions have been scaled-down dramatically to a present day size of sub-0....

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書誌詳細
第一著者:	Norain Mohd Saad
その他の著者:	Ramzan Mat Ayub (Advisor)
フォーマット:	Learning Object
言語:	English
出版事項:	Universiti Malaysia Perlis 2008
主題:	Time Dependent Dielectric Metal oxide semiconductors Very Large Scale Integration (VLSI) MOS capasitor Silica Gate Oxide Integrity (GOI)
オンライン･アクセス:	http://dspace.unimap.edu.my/xmlui/handle/123456789/1275
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

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