Gate Oxide Integrity (GOI) Characterization For Deep Submicron CMOS Device

• Main Author: Norain Mohd Saad
• Other Authors: Ramzan Mat Ayub (Advisor)
• Format: Learning Object
• Language: English
• Published: Universiti Malaysia Perlis 2008
• Subjects: Time Dependent Dielectric; Metal oxide semiconductors; Very Large Scale Integration (VLSI); MOS capasitor; Silica; Gate Oxide Integrity (GOI)
• Online Access: http://dspace.unimap.edu.my/xmlui/handle/123456789/1275

Since the early days of Very Large Scale Integration (VLSI) era, the scaling of gate oxide thickness has been instrumental in controlling the short channel related effects in state-of-the-art device structure, as MOS gate dimensions have been scaled-down dramatically to a present day size of sub-0....