Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition

We focus on the growth of p-type CuAlO2 thin films and its thermoelectric properties. Thin films are deposited by pulsed laser deposition technique on single-crystal sapphire substrates varying the oxygen partial pressure. Thin film deposited at oxygen partial pressure of 200 mTorr presents bigger g...

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Bibliographic Details
Main Authors: Saini, Shrikant, Mele, Paolo, Osugi, Shunsuke, Adam, Malik Ismail
Format: Article
Published: Springer Verlag (Germany) 2018
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Online Access:http://eprints.um.edu.my/20810/
https://doi.org/10.1007/s11665-018-3601-6
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