Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD

• Main Authors: Abd Rahman, Mohd Nazri, Shuhaimi, Ahmad, Abdul Khudus, Muhammad Imran Mustafa, Anuar, Afiq, Zainorin, Mohamed Zulhakim, Talik, Noor Azrina, Chanlek, Narong, Abd Majid, Wan Haliza
• Format: Article
• Published: Springer 2021
• Subjects: Q Science (General); QC Physics
• Online Access: http://eprints.um.edu.my/25973/; https://doi.org/10.1007/s11664-021-08768-0

A pulsed atomic-layer epitaxy growth technique has been introduced to substantially diminish the induced strain and oxygen incorporation on aluminium nitride films grown at standard pressure by metal organic chemical vapour deposition. The qualities of the as-deposited aluminium nitride films were s...