Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition

We focus on the growth of p-type CuAlO2 thin films and its thermoelectric properties. Thin films are deposited by pulsed laser deposition technique on single-crystal sapphire substrates varying the oxygen partial pressure. Thin film deposited at oxygen partial pressure of 200 mTorr presents bigger g...

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Main Authors: Saini, Shrikant, Mele, Paolo, Osugi, Shunsuke, Adam, Malik Ismail
Format: Article
Published: Springer Verlag (Germany) 2018
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Online Access:http://eprints.um.edu.my/20810/
https://doi.org/10.1007/s11665-018-3601-6
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spelling my.um.eprints.208102019-04-05T07:59:56Z http://eprints.um.edu.my/20810/ Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition Saini, Shrikant Mele, Paolo Osugi, Shunsuke Adam, Malik Ismail TJ Mechanical engineering and machinery We focus on the growth of p-type CuAlO2 thin films and its thermoelectric properties. Thin films are deposited by pulsed laser deposition technique on single-crystal sapphire substrates varying the oxygen partial pressure. Thin film deposited at oxygen partial pressure of 200 mTorr presents bigger grains (about 10 μm in size) and shows Seebeck coefficient as high as 270 µV/K with a conductivity of about 0.8 S/cm so that its power factor is about 5.7 µW/mK2 at 800 K, twice than observed in the film deposited at 60 mTorr of oxygen. Springer Verlag (Germany) 2018 Article PeerReviewed Saini, Shrikant and Mele, Paolo and Osugi, Shunsuke and Adam, Malik Ismail (2018) Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition. Journal of Materials Engineering and Performance, 27 (12). pp. 6286-6290. ISSN 1059-9495 https://doi.org/10.1007/s11665-018-3601-6 doi:10.1007/s11665-018-3601-6
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic TJ Mechanical engineering and machinery
spellingShingle TJ Mechanical engineering and machinery
Saini, Shrikant
Mele, Paolo
Osugi, Shunsuke
Adam, Malik Ismail
Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition
description We focus on the growth of p-type CuAlO2 thin films and its thermoelectric properties. Thin films are deposited by pulsed laser deposition technique on single-crystal sapphire substrates varying the oxygen partial pressure. Thin film deposited at oxygen partial pressure of 200 mTorr presents bigger grains (about 10 μm in size) and shows Seebeck coefficient as high as 270 µV/K with a conductivity of about 0.8 S/cm so that its power factor is about 5.7 µW/mK2 at 800 K, twice than observed in the film deposited at 60 mTorr of oxygen.
format Article
author Saini, Shrikant
Mele, Paolo
Osugi, Shunsuke
Adam, Malik Ismail
author_facet Saini, Shrikant
Mele, Paolo
Osugi, Shunsuke
Adam, Malik Ismail
author_sort Saini, Shrikant
title Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition
title_short Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition
title_full Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition
title_fullStr Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition
title_full_unstemmed Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition
title_sort effect of oxygen pressure on thermoelectric properties of p-type cualo2 films fabricated by pulsed laser deposition
publisher Springer Verlag (Germany)
publishDate 2018
url http://eprints.um.edu.my/20810/
https://doi.org/10.1007/s11665-018-3601-6
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score 13.18916