The effect of channel variation for long channel GaAs junctionless gate-all-around transistor

• Main Authors: Rasol, M. Faidzal, T., Ainun, H., Fatimah, J., Zaharah, S. Z. A., Mastura, A., Rashidah, A. Riyad, Munawar
• Format: Article
• Language: English
• Published: Sumy State University 2022
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/99462/1/ZaharahJohari2022_TheEffectofChannelVariationforLongChannel.pdf; http://eprints.utm.my/id/eprint/99462/; http://dx.doi.org/10.21272/jnep.14(2).02010

Since the Moore era, the use of advanced nanomaterial device architecture has been introduced to improve its electrical performance. This paper reports on the study of performance of a long channel gallium arsenide (GaAs) nanowire Junctionless Gate-All-Around (JGAA) transistor, including the quantum mechanical effect. In order to include the quantum mechanical effect, the Poisson density gradient model is used to conduct the analysis. Therefore, the channel radius (Rchn), oxide thickness (TOX) and carrier concentration (Nd) were varied to study the electrical performances of the proposed device. Through simulation, it was found that the on-current (Ion) increases significantly by 54 % with a smaller oxide thickness and channel radius. This paper also highlights the drawback of the classical model, in which it is impossible to capture the quantum effect, where the current deviations show a 12 % difference between the classical model and the quantum model. The results presented here indicate the possibility of using JGAA transistor for future nanoelectronic device application.